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59N10DP L0650 02010 R1163X 7461096 01456 BZM55B27 SR11G
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  Datasheet File OCR Text:
 Surface-mount Power Transistor Array SDA04
Absolute Maximum Ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings -60 -60 -6 -6 (pulse -12) -1 2.5 (No Fin) 150 -55 to +150 Unit V V V A A W C C
Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) Test Conditions VCB = -60V VEB = -6V IC = -25mA VCE = -4V, IC = -2A IC = -2A, IB = -0.1A Ratings -10max -10max -60min 100min -0.4max
(Ta=25C) Unit A A V V
External Dimensions SMD-16A
1.00.3
0.25
0.890.15 0.75 -0.05
+0.15
2.540.25
16 9.80.3 6.8max 3.00.2 6.30.2 8.00.5
9
a b
Pin 1 20.0max
0.2
Typical Switching Characteristics
VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) -50 IB2 (mA) 50 ton (s) 0.4 tstg (s) 1.75 tf (s) 0.22
0 to 0.15
+0.15 0.3 -0.05
8
19.56
4.0max
1.40.2
3.60.2
a) Type No. b) Lot No. (Unit: mm)
s IC -- VCE Characteristics
6 5 4
-200mA -100mA -50mA -30mA
s VCE (sat) -- IC Temperature Characteristics (typ.)
3
IC/IB = 20
s IC -- VBE Temperature Characteristics (typ.)
6 5
(VCE = -4V)
VCE (sat) (V)
2
IC (A)
3 2 1 0
-20mA
IC (A)
Ta = 150C 75C 25C -55C
4 3 2 1
Ta = 150C 75C 25C -55C
-10mA IB = -5mA
1
0
1
2
3
4
5
0 -0.05
-0.1
-1
-10
0
0
0.5
1.0
1.5
VCE (V)
IC (A)
VBE (V)
s hFE -- IC Temperature Characteristics
1000
VCE = -4V
s ton*tstg*tf -- IC Characteristics
5
s
ton
j-a -- t
Characteristics
50
Ta = 25C Single pulse
j-a (C/W)
500
ton*tstg*tf (sec)
1 0.5
hFE
VCC = 12V IB1 = -IB2 = 50mA
10 5
tf
100 50 30 -0.01 -0.1
Ta = 150C 75C 25C -55C
0.1 0.05 0.5 0.1 0.5 1
tstg
5 10
1 0.3 0.001
-1
-10
0.01
0.1
1
2
IC (A)
IC (A)
t (s)
s Safe Operating Area (single pulse)
-20 -10
10 m
s PT -- Ta Derating
4
Equivalent Circuit Diagram
s 1m
3
s
Without heatsink
IC (A)
s
PT (W)
20
16
10
m
2
-1 -0.5
15
9
1
natural air cooling Without heatsink
2
8
-0.1 -3
-5
-10
-50
-100
0
0
50
100
150
VCE (V)
Ta (C)
69


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